Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
Identifieur interne : 000251 ( Main/Repository ); précédent : 000250; suivant : 000252Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
Auteurs : RBID : Pascal:13-0310619Descripteurs français
- Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Hétérostructure, Autoassemblage, Epitaxie phase liquide, Epitaxie phase vapeur, Méthode MOVPE, Solution solide, Chimie surface, Section efficace, Coupe transversale, Microscopie électronique transmission, Antimoniure d'indium, Arséniure d'indium, Antimoine, Nitrure de calcium, Mouillage, Mouillabilité, Composé de l'indium, InSb, InAs, InAsP, Substrat InAs, InAsSbP, 8107T, 8535B, 8107B, 8116D.
- Wicri :
- concept : Antimoine.
English descriptors
- KwdEn :
- Antimony, Calcium nitride, Cross section, Cross sections, Heterostructures, III-V compound, III-V semiconductors, Indium antimonides, Indium arsenides, Indium compounds, LPE, MOVPE method, Nanostructured materials, Quantum dots, Self-assembly, Solid solutions, Surface chemistry, Transmission electron microscopy, VPE, Wettability, Wetting.
Abstract
The heterostructures with self-assembled InSb quantum dots (QDs) with density (up to 1010 cm-2) were obtained on the InAs-rich (100)-oriented surface by combining technology including liquid phase epitaxy and metalorganic vapor phase epitaxy. Using of the multicomponent In-As-Sb-P solid solutions lattice-matched with InAs substrate as matrix layers allows changing the surface chemistry of a matrix material. High-resolution cross-section images of the coherent InSb QDs buried into the InAs(Sb,P) matrix were obtained by transmission electron microscopy. It was experimentally demonstrated that self-assembled InSb QDs can be formed on InAs-rich surface in Stranski-Krastanow mode. The optimal thickness of the wetting layer was dependent on matrix surface chemistry: 2 nm-thick for the binary InAs surface and 1.3 nm-thick for the quaternary InAsSbP one were found.
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Pascal:13-0310619Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix</title><author><name sortKey="Moiseev, Konstantin" uniqKey="Moiseev K">Konstantin Moiseev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Institute, Politekhnicheskaya 26</s1><s2>Saint-Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint-Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Parkhomenko, Yana" uniqKey="Parkhomenko Y">Yana Parkhomenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Institute, Politekhnicheskaya 26</s1><s2>Saint-Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint-Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Nevedomsky, Vladimir" uniqKey="Nevedomsky V">Vladimir Nevedomsky</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Institute, Politekhnicheskaya 26</s1><s2>Saint-Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint-Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0310619</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0310619 INIST</idno><idno type="RBID">Pascal:13-0310619</idno><idno type="wicri:Area/Main/Corpus">000698</idno><idno type="wicri:Area/Main/Repository">000251</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony</term><term>Calcium nitride</term><term>Cross section</term><term>Cross sections</term><term>Heterostructures</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Indium compounds</term><term>LPE</term><term>MOVPE method</term><term>Nanostructured materials</term><term>Quantum dots</term><term>Self-assembly</term><term>Solid solutions</term><term>Surface chemistry</term><term>Transmission electron microscopy</term><term>VPE</term><term>Wettability</term><term>Wetting</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Point quantique</term><term>Nanomatériau</term><term>Hétérostructure</term><term>Autoassemblage</term><term>Epitaxie phase liquide</term><term>Epitaxie phase vapeur</term><term>Méthode MOVPE</term><term>Solution solide</term><term>Chimie surface</term><term>Section efficace</term><term>Coupe transversale</term><term>Microscopie électronique transmission</term><term>Antimoniure d'indium</term><term>Arséniure d'indium</term><term>Antimoine</term><term>Nitrure de calcium</term><term>Mouillage</term><term>Mouillabilité</term><term>Composé de l'indium</term><term>InSb</term><term>InAs</term><term>InAsP</term><term>Substrat InAs</term><term>InAsSbP</term><term>8107T</term><term>8535B</term><term>8107B</term><term>8116D</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Antimoine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The heterostructures with self-assembled InSb quantum dots (QDs) with density (up to 10<sup>10 </sup>cm<sup>-2</sup>) were obtained on the InAs-rich (100)-oriented surface by combining technology including liquid phase epitaxy and metalorganic vapor phase epitaxy. Using of the multicomponent In-As-Sb-P solid solutions lattice-matched with InAs substrate as matrix layers allows changing the surface chemistry of a matrix material. High-resolution cross-section images of the coherent InSb QDs buried into the InAs(Sb,P) matrix were obtained by transmission electron microscopy. It was experimentally demonstrated that self-assembled InSb QDs can be formed on InAs-rich surface in Stranski-Krastanow mode. The optimal thickness of the wetting layer was dependent on matrix surface chemistry: 2 nm-thick for the binary InAs surface and 1.3 nm-thick for the quaternary InAsSbP one were found.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>543</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix</s1></fA08><fA09 i1="01" i2="1" l="FRE"><s1>International Conference NanoSEA (NANOstructures SElf Assembly) 2012</s1></fA09><fA11 i1="01" i2="1"><s1>MOISEEV (Konstantin)</s1></fA11><fA11 i1="02" i2="1"><s1>PARKHOMENKO (Yana)</s1></fA11><fA11 i1="03" i2="1"><s1>NEVEDOMSKY (Vladimir)</s1></fA11><fA12 i1="01" i2="1"><s1>BERBEZIER (Isabelle)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>DE CRESCENZI (Maurizio)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Ioffe Institute, Politekhnicheskaya 26</s1><s2>Saint-Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>IM2NP-CNRS</s1><s2>Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Roma "Tor Vergata"</s1><s2>Roma</s2><s3>ITA</s3><sZ>2 aut.</sZ></fA15><fA20><s1>74-77</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000501544010170</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0310619</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The heterostructures with self-assembled InSb quantum dots (QDs) with density (up to 10<sup>10 </sup>cm<sup>-2</sup>) were obtained on the InAs-rich (100)-oriented surface by combining technology including liquid phase epitaxy and metalorganic vapor phase epitaxy. Using of the multicomponent In-As-Sb-P solid solutions lattice-matched with InAs substrate as matrix layers allows changing the surface chemistry of a matrix material. High-resolution cross-section images of the coherent InSb QDs buried into the InAs(Sb,P) matrix were obtained by transmission electron microscopy. It was experimentally demonstrated that self-assembled InSb QDs can be formed on InAs-rich surface in Stranski-Krastanow mode. The optimal thickness of the wetting layer was dependent on matrix surface chemistry: 2 nm-thick for the binary InAs surface and 1.3 nm-thick for the quaternary InAsSbP one were found.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A16D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Point quantique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Quantum dots</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Heterostructures</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Autoassemblage</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Self-assembly</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>LPE</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>VPE</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>MOVPE method</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Solution solide</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Solid solutions</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Chimie surface</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Surface chemistry</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Section efficace</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Cross sections</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Coupe transversale</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Cross section</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Corte transverso</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Antimoine</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Antimony</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Nitrure de calcium</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Calcium nitride</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Calcio nitruro</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Mouillage</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Wetting</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Mouillabilité</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Wettability</s0><s5>30</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Composé de l'indium</s0><s5>31</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Indium compounds</s0><s5>31</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>InAsP</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Substrat InAs</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>InAsSbP</s0><s4>INC</s4><s5>50</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8107T</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8535B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8116D</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>294</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference NanoSEA (NANOstructures SElf Assembly) 2012</s1><s2>4</s2><s3>Santa Margherita di Pula, Sardinia ITA</s3><s4>2012-06-25</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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